SiC Power Device Research Scientist – MVHV Design

Durham, North Carolina

Full time

26-939

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Here’s the Gist

In this position within Wolfspeed’s Power Device Technology Development department, you will be leading device development projects for next-generation silicon carbide (SiC) power devices (MOSFETs, JFETs, JBS diodes and high voltage IGBTs) with an emphasis on High Voltage Bipolar Devices. You will be participating in all aspects of silicon carbide power device development, with a focus on device design efforts. You will interact with key customers as well as colleagues from Process Development, Test and Validation, Reliability, and New Product Introduction to master understanding of the full product life cycle of the new technologies.

The Day-to-Day:

• Lead device development efforts in high performance SiC power switching devices

• Participate in device concept development activities in various SiC device structures, including SiC power MOSFETs, JFETs, BJTs, IGBTs, PiN diodes, JBS diodes, and GTO thyristors

• Explore new device concepts for future High Voltage / Medium Voltage SiC power devices

• Perform Design of Experiment (DoE) activities for performance optimization of High Voltage SiC power devices

• Provide optimum device designs with considerations to manufacturability and reliability

• Hands on characterization experimental devices

• Data analysis of experimental data

• Interact with teams in power electronics applications, fab process development, reliability, and modeling, and deliver device designs with optimal characteristics for target applications.

• Prepare technical presentations and papers for internal meetings, as well as conferences and journals

This Job is Right for You if You Have (Requirements):

• Ph.D. in Electrical Engineering, Solid State Physics, or closely related area

• 5 – 10 years of industrial experience in high voltage silicon bipolar power device development preferred

• Strong understanding in semiconductor device physics

• Experience in hands-on characterization of power semiconductor devices

• Working knowledge of commercial TCAD tools

• Working knowledge of CAD layout tools

• Understanding of semiconductor fabrication processes and process integration

• Understanding of semiconductor device characterization methods

• Design of experiments and data interpretation skills

• Ability to work in a team setting

• Excellent analytical and problem-solving skills

• Excellent communications/presentations skills

• US Citizenship required

This role may require additional duties and/or assignments as designated by management.

To put it legally – Wolfspeed is an equal opportunity employer.

We recruit, employ, train, compensate and promote regardless of race, sex, religion, color, national origin, disability, age, veteran status, gender identity, sexual orientation and other protected status as required by law.

We are an equal opportunity employer and all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, national origin, disability status, protected veteran status, or any other characteristic protected by law.

Wolfspeed is a powerhouse semiconductor company focused on silicon carbide and GaN technologies.

After more than thirty years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity.

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