Semiconductor Device Characterization Engineer

Job Description

Within the BAE Systems MMIC and Foundry Capabilities group, based in Nashua, NH, we design and fabricate high performance GaN and GaAs microwave and millimeter-wave ICs for the Space and Defense markets. We are looking for a mid-level semiconductor device characterization engineer to contribute to the development of our GaN and GaAs fabrication processes and the modeling of transistors at the heart of our GaN and GaAs ICs. Job responsibilities will include the following:

• Set up wafer probers and test equipment to characterize transistors and related semiconductor devices for state-of-the-art GaN and GaAs process technologies

• Calibrate test systems and execute test plans for a wide range of high-frequency on-wafer measurements over temperature including static and pulsed current-voltage, CW and pulsed S-Parameter, load- and source-pull, noise parameter, and intermodulation/mixer measurements

• Provide validated test data files for device compact modeling activities and summaries of validated test data for process development activities

• Contribute to the development of test structures and test chips for device and technology characterization, modeling, and validation

• Work with our process development team to support the development and production release of next generation GaN and GaAs processes

• Work with our device modeling team to support development of predictive compact simulation models that accurately account for geometric, bias, temperature, and statistical variation from DC to W-band

Required Education, Experience, & Skills

You are best equipped for this job if you have:

• A University Degree (master or above) in Electrical Engineering, Semiconductor Physics, Microelectronics or comparable

• 5 years of professional experience with on-wafer measurement of semiconductor devices and integrated circuits

• Knowledge of semiconductor process and device physics with special emphasis on compound semiconductors and Field-Effect Transistors (FETs)

• Proficiency with state-of-the-art high-frequency vector network analyzers (VNAs) including for high-power/nonlinear frequency and time-domain measurements under CW and pulsed conditions

• Experience with scripting languages like Python

• Understanding of calibration and measurement techniques for on-wafer measurements including static and pulsed I-V, CW and pulsed S-Parameters, gain, power, efficiency, linearity, intermodulation distortion, load-/source-pull, and noise parameters/noise figure

• Excellent verbal and written communication skills including strong presentation skills

• A continuous improvement mindset

Pay Information

Full-Time Salary Range: $97008 - $164914

Please note: This range is based on our market pay structures. However, individual salaries are determined by a variety of factors including, but not limited to: business considerations, local market conditions, and internal equity, as well as candidate qualifications, such as skills, education, and experience.

Employee Benefits: At BAE Systems, we support our employees in all aspects of their life, including their health and financial well-being. Regular employees scheduled to work 20 hours per week are offered: health, dental, and vision insurance; health savings accounts; a 401(k) savings plan; disability coverage; and life and accident insurance. We also have an employee assistance program, a legal plan, and other perks including discounts on things like home, auto, and pet insurance. Our leave programs include paid time off, paid holidays, as well as other types of leave, including paid parental, military, bereavement, and any applicable federal and state sick leave. Employees may participate in the company recognition program to receive monetary or non-monetary recognition awards. Other incentives may be available based on position level and/or job specifics.

Semiconductor Device Characterization Engineer

130955BR

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