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Staff Device Engineer

Power Integrations

San Jose, CAJobPosted 2mo ago

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At a glance

Compensation
No compensation found
Location
San Jose, CA
Work Authorization
Not specified

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Requirements

Credentials this posting asks for.

Doctorate

Job overview

Power Integrations is hiring a Staff Device Engineer. The Staff Device Engineer will design and qualify high-voltage GaN power devices for high-performance and high-reliability products, including automotive applications. This role involves performing device/process simulations, device layout, and full characterization, as well as evaluating electrical/thermal performance and reliability. The engineer will also interact with other departments to support customer requirements.

Key focus areas include Design and qualify high-voltage GaN power devices integrated in products, Perform device/process simulations and device layout for GaN power devices, and Create, fabricate, and fully characterize power devices.

Important skills include GaN Power Devices, Device/Process Simulations, Device Layout, Power Device Creation, Fabrication, and Full Characterization. Preferred (not required): Si Power Device Development.

Skills & qualifications

RequiredNice to have

Skills

GaN Power DevicesDevice/Process SimulationsDevice LayoutPower Device CreationFabricationFull CharacterizationElectrical Performance EvaluationThermal Performance EvaluationReliability EvaluationSemiconductor Device PhysicsWBGTCAD SimulationCADENCE Layout ToolsHigh-Voltage TestingData Acquisition SystemsCommunicationCollaborationSi Power Device Development

Qualifications

B.Sc Degree in Electrical Engineering With 8 Years' Working Experience or M.Sc Degree in Electrical Engineering With 6 Years' Working Experience or Ph.D Degree in Electrical Engineering With 3 Years' Working ExperienceProven Track Record of Independently Designing and Taking Into Volume Production of High-Voltage GaN Power Devices

Full job description

Responsibilities

  • Design and qualify high - voltage GaN power devices integrated in high performance and high reliability products (including automotive) .

  • Perform device/process simulations and device layout for GaN power devices.

  • Assignments will include power device creation, fabrication and full characterization , and issuing technical reports .

  • Evaluate electrical / thermal performance and reliability of GaN power devices .

  • Prior experience in Si power device development is a plus .

  • Interact with other departments for best use of Company’s technologies and to support key customer requirements .

Requirements

  • B . Sc degree in Electrical Engineering with 8 years’ working experience or

  • M . Sc degree in Electrical Engineering with 6 years’ working experience or

  • Ph. D degree in Electrical Engineering with 3 years’ working experience

  • Proven track record of independently designing and taking into volume production of high-voltage GaN power devices

  • Sound understanding of semiconductor device physics , especially WBG

  • Proficient in TCAD simulation and CADENCE layout tools

  • Hands-on experience with high - voltage testing and data acquisition systems

  • Strong communication and collaboration skills

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