逻辑设计工程师（memory）
Beijing, Beijing, ChinaJobPosted 4mo agoStill listed 3 days ago
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Job overview
The role defines overall storage system architecture, including controller and interface micro‑architectures, models system performance, analyzes bottlenecks, and drives trade‑offs in power, complexity, reliability and feasibility, collaborating across circuit, RTL, firmware, packaging, test and product teams to deliver silicon.
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Full job description
北京、上海、成都、新加坡均可。 工作职责
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负责存储系统的整体架构定义，包括controller, interface等微架构的设计。 2. 根据目标应用的 workload 特征，定义并分解系统级关键指标。 3. 建立端到端系统性能模型，分析架构瓶颈，并推动关键参数与模块边界收敛。 4. 负责关键模块边界、接口关系及数据/控制路径的架构规划与收敛。 5. 围绕性能、功耗、复杂度、可靠性和可实现性进行架构 trade-off，并推动方案落地。 6. 与电路、RTL、验证、固件、封装、测试和产品团队协同，完成从 spec 到 silicon 的完整落地。 任职资格
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微电子、电子工程、计算机工程或相关专业，硕士及以上学历。博士加分。 2. 5年及以上memory架构设计相关经验，熟悉NAND/DRAM系统之一。 3. 深刻理解存储系统行为，具备独立进行系统建模、瓶颈分析与架构收敛能力。 4. 具备独立分析与解决复杂工程问题的能力，能够在信息不完备条件下完成问题拆解、建模分析和方案闭环。 5. 具备良好的跨团队沟通能力和文档能力。
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